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| S525T Vishay Telefunken N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance D Low noise figure 1 G 13 581 94 9280 D 2 3 12624 S525T Marking: LB Plastic case (SOT 23) 1=Source, 2=Gate , 3=Drain S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate-source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol VDS ID IGSM Ptot TCh Tstg Value 20 30 10 200 150 -55 to +150 Unit V mA mA mW C C Tamb 60 C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85045 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (7) S525T Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate - source breakdown voltage Gate - source leakage current Drain current Gate - source cut-off voltage Test Conditions ID = 10 mA, -VGS = 4 V IGS = 10 mA, VDS = 0 VGS = 6 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 20 mA Symbol V(BR)DS V(BR)GSS IGSS IDSS -VGS(OFF) Min 20 7.5 5 Typ Max 12 50 14 2.5 Unit V V nA mA V Electrical AC Characteristics VDS = 10 V, ID = 10 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Feedback capacitance Output capacitance Noise figure Power gain Test Conditions Symbol y21s Cissg1 Crss Coss F Gps Min 14 Typ 16 2.7 25 1.0 1.0 25 Max Unit mS pF fF pF dB dB GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz www.vishay.de * FaxBack +1-408-970-5600 2 (7) Document Number 85045 Rev. 3, 20-Jan-99 S525T Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 96 12159 2.0 C oss - Output Capacitance ( pF ) 1.5 1.0 0.5 VGS=0 ID=10mA f=1MHz 20 40 60 80 100 120 140 160 13614 0 0 3 6 9 12 Tamb - Ambient Temperature ( C ) VDS - Drain Source Voltage ( V ) Figure 1. Total Power Dissipation vs. Ambient Temperature 20 VGS= 0.6V ID - Drain Current ( mA ) 16 0.4V 12 8 -0.2V 4 0 0 13612 Figure 4. Output Capacitance vs. Drain Source Voltage 5 f=300MHz 4 250MHz 200MHz 150MHz 2 100MHz 1 0 50MHz VDS=10V ID=10mA f=50...300MHz 0.2V 0 Im ( y ) ( mS ) 11 10 13615 3 -0.4V -0.6V 2 4 6 8 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain Source Voltage ( V ) Re (y11) ( mS ) Figure 2. Drain Current vs. Drain Source Voltage 4.0 Cissg - Gate Input Capacitance ( pF ) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -2.0 13613 Figure 5. Short Circuit Input Admittance 0.00 -0.01 Im ( y ) ( mS ) 12 -0.02 -0.03 200MHz -0.04 -0.05 -0.01 13616 VDS=10V ID=10mA f=50...300MHz 50MHz 100MHz 150MHz VDS=10V f=1MHz -1.5 -1.0 -0.5 0.0 0.5 1.0 250MHz f=300MHz -0.008 -0.006 -0.004 -0.002 0.000 VGS - Gate Source Voltage ( V ) Re (y12) ( mS ) Figure 3. Gate Input Capacitance vs. Gate Source Voltage Figure 6. Short Circuit Reverse Transfer Admittance Document Number 85045 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (7) S525T Vishay Telefunken 0 -2 Im ( y ) ( mS ) 21 -4 -6 -8 -10 0 13617 2.0 VDS=10V ID=10mA f=50...300MHz 50MHz 100MHz 150MHz 200MHz 250MHz f=300MHz Im ( y ) ( mS ) 22 1.5 f=300MHz 250MHz 200MHz 150MHz 0.5 100MHz 50MHz 0 4 8 12 16 20 13618 1.0 VDS=10V ID=10mA f=50...300MHz 0.3 0.4 0.5 0 0.1 0.2 Re (y21) ( mS ) Re (y22) ( mS ) Figure 7. Short Circuit Forward Transfer Admittance Figure 8. Short Circuit Output Admittance www.vishay.de * FaxBack +1-408-970-5600 4 (7) Document Number 85045 Rev. 3, 20-Jan-99 S525T Vishay Telefunken VDS = 10 V, ID = 10 mA , Z0 = 50 W S11 j 120 j0.5 j2 150 j0.2 j5 150 0 0.2 0.5 1 2 5 30 S12 90 60 300 MHz 50 1 -j0.2 13 554 S21 90 120 60 150 150 50 -j0.2 -150 -30 -120 13 556 -60 -90 13 557 Figure 10. Document Number 85045 Rev. 3, 20-Jan-99 AAAAAAAAAA AA 180 AAAAAAAAAA A AAAAAAAAAA A 300 MHz -j2 -j0.5 -j 180 50 0.004 0.008 0 150 -j5 -150 -30 -120 13 555 -60 -90 Figure 9. Figure 11. S22 j j0.5 300 MHz 30 j0.2 j5 j2 0.8 1.6 0 0 0.2 0.5 1 2 5 50 300 MHz -j5 -j0.5 -j -j2 Figure 12. www.vishay.de * FaxBack +1-408-970-5600 5 (7) S525T Vishay Telefunken Dimensions in mm 12780 www.vishay.de * FaxBack +1-408-970-5600 6 (7) Document Number 85045 Rev. 3, 20-Jan-99 S525T Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85045 Rev. 3, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 7 (7) |
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